22 December, 2024

Samsung Galaxy S20 FE Snapdragon 865 Genshin Impact Gaming test | 120Hz Display, 8GB RAM

Samsung Galaxy S20 FE Snapdragon 865 Genshin Impact Gaming test | 120Hz Display, 8GB RAM. Galaxy S20 FE 2556GB is equipped with a powerful Qualcomm Snapdragon 865 chip that delivers high performance but still saves battery thanks to the application of 7nm process.

Video Samsung Galaxy S20 FE Snapdragon 865 Genshin Impact Gaming test | 120Hz Display, 8GB RAM:

Display: Super AMOLED 6.5″ Full HD+
OS: Android 11
CPU: Snapdragon 865
GPU: Adreno 650
RAM: 8 GB
Storage: 256 GB
Battery: 4500 mAh

Galaxy S20 FE 2556GB is equipped with a powerful Qualcomm Snapdragon 865 chip that delivers high performance but still saves battery thanks to the application of 7nm process. With this processor, the machine can handle many different tasks more smoothly.

Samsung Galaxy S20 FE Snapdragon 865 Genshin Impact Gaming test

In addition, the product is also equipped with quite a large amount of RAM up to 8GB and 256GB internal memory. With a large amount of RAM, users can handle many tasks at the same time smoothly. In addition, the latest UFS 3.1 memory standard for high read and write speeds makes file transfer between Galaxy S20 Fe 256GB and other devices faster.

Regarding the ability to play games, with a terrible configuration and a large amount of RAM, users can rest assured to play all heavy games at the present time without fear of jerking and lag.

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